Total Harmonic Distortion of Single Phase Mid-Point Cycloconverter Comparison Between MOSFET, IGBT and GTO Power Devices
نویسندگان
چکیده
منابع مشابه
Cryo-MOSFET and IGBT : a Comparison
The prefened device for power eletronics in the multi-kilowatt 1300-1000 V range is today the IGBT (Insulated Gate Bipolar Transistor). It may in the near future see an emerging strong competitor for certain suitable applications: The Cryo-MOSFET. This paper compares the main properties of these two devices. It demonstrates that the Cryo-MOSFET in combination with high-temperature superconducto...
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ژورنال
عنوان ژورنال: International Journal of Computer Applications
سال: 2019
ISSN: 0975-8887
DOI: 10.5120/ijca2019918300